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MTP2N20 Arkusz danych(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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MTP2N20 Arkusz danych(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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2 / 5 page ![]() IRF610-613 MTP2N18/20N20 N-Channel Power Mosfets 3.5A,150-220V www.artschip.com 2 Electrical Characteristics (Tc=25℃ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions2 Off Characteristics 200 180 V(BR)DSS Drain Source Breakdown Voltage1 IRF610/612/MTP2N20 MTP2N16 IRF611/613 150 V VGS=0V, ID=250µA 250 µA VDS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA VDS=0.8 x Rated VDSS, VGS=0V, Tc=125℃ IGSS Gate-Body Leakage Current ±500 nA VGS=±20V, VDS=0V On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF610-613 MTP2N18/20 2.0 4.5 V ID=250µA, VDS=VGS ID=1mA, VDS=VGS 1.5 2.4 RDS(on) Static Drain-Source On-Resistance 2 IRF610/611 IRF612/613 MTP2N18/20 1.8 Ω VGS=10V, ID=1.25A ID=1.0A 4.4 V VGS=10V; ID=2.0A VDS(on) Drain-Source On-Voltage 2 MTP2N18/2N20 3.6 V VGS=10V; ID=1.0A; TC=100 gfs Forward Transconductance 0.8 S( ) VDS=10V, ID=1.25A Dynamic Characteristics Ciss Input Capacitance 200 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 25 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=25℃, Figures 11,12) 3 td(on) Turn-On Delay Time 15 ns tr Rise Time 25 ns td(off) Turn-Off Delay Time 15 ns tf Fall Time 15 ns VDD=50V, ID=1.25A VGS=10V, RGEN=50Ω RGS=50Ω Qg Total Gate Charge 7.5 nC VGS=10V, ID=3.0A VDD=45V Electrical Characteristics (Cont.) (Tc=25℃ unless otherwise noted) Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Diode Forward Voltage IRF610/611 2.0 V IS=2.5A; VGS=0V VSD IRF612/613 1.8 V IS=2.0A; VGS=0V trr Reverse Recovery Time 290 ns IS=2.5A; dls/dt=25A/µS Notes 1. TJ=+25℃ to +150℃ 2. Pulse test; Pulse width ≤ 80µS, Duty Cycle ≤ 1% 3. Switching time measurements performed on LEM TR-58 test equipment. |
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