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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRFF024 Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFF024 Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 7 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 8.0 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 5.7 IDM Pulsed Drain Current ➀ 32 PD @ TC = 25°C Max. Power Dissipation 2 0 W Linear Derating Factor 0.16 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 110 mJ IAR Avalanche Current ➀ —A EAR Repetitive Avalanche Energy ➀ —mJ dv/dt Peak Diode Recovery dv/dt ➂ 5.5 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98(typical) g PD - 90657 The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- age control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switch- ing power supplies, motor controls, inverters, chop- pers, audio amplifiers and high energy pulse circuits. o C A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFF024 THRU-HOLE (TO-205AF) 60V, N-CHANNEL 01/23/01 www.irf.com 1 TO-39 Product Summary Part Number BVDSS RDS(on) ID IRFF024 60V 0.15 Ω 8.0A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling For footnotes refer to the last page |
Podobny numer części - IRFF024 |
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Podobny opis - IRFF024 |
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