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HM2P10PR Arkusz danych(PDF) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM2P10PR Arkusz danych(HTML) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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1 / 3 page  P-Channel Enhancement Mode MOSFET FEATURES ◆ RDS(Typ.) < 250 mΩ@VGS = -10 V ◆ RDS(Typ.) < 300 mΩ@VGS = -4.5V ◆ Gross Die = 9600 APPLICATIONS ◆ Battery Charge ◆ Load Switching ◆ Power Converter Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous @ TA =25°C ID -5 A Drain Current-Pulsed @ TA =25°C Note1 IDM -15 A Maximum Power Dissipation PD 2.1 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance, Junction-to-Ambient Note2 RθJA 60 °C/W D G S Schematic diagram SOT-89-3L top view HM2P10PR Power MOSFET Datasheet |
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