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STB11NB40 Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STB11NB40
Szczegółowy opis  N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
PDF  11 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB11NB40 Arkusz danych(HTML) 4 Page - STMicroelectronics

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STB11NB40/STB11NB40-1
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Table 11. Source Drain Diode
Note: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Figure 3. Safe Operating Area
Figure 4. Thermal Impedance
Figure 5. Output Characteristics
Figure 6. Transfer Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
10.7
A
ISDM
(1)
Source-drain Current
(pulsed)
42.8
A
VSD
(2)
Forward On Voltage
ISD = 10.7 A; VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 10.7 A; di/dt = 100 A/µs
400
ns
Qrr
Reverse RecoveryCharge
VDD = 100 V; Tj = 150 °C
(see test circuit, Figure 18)
3.4
µC
IRRAM
Reverse RecoveryCharge
17
A



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