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CD4017BMS Arkusz danych(PDF) 4 Page - Renesas Technology Corp

Numer części CD4017BMS
Szczegółowy opis  CMOS Counter/Dividers
PDF  10 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CD4017BMS Arkusz danych(HTML) 4 Page - Renesas Technology Corp

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CD4017BMS, CD4022BMS
FN3297 Rev 0.00
Page 4 of 10
August 1998
Propagation Delay Clock
to Decode Out
TPHL1
TPLH1
VDD = 10V
1, 2, 3
+25oC
-
270
ns
VDD = 15V
1, 2, 3
+25oC
-
170
ns
Propagation Delay Clock
to Carry Out
TPHL2
TPLH2
VDD = 10V
1, 2, 3
+25oC
-
250
ns
VDD = 15V
1, 2, 3
+25oC
-
160
ns
Propagation Delay Reset
to out
TPHL3
TPLH3
VDD = 10V
1, 2, 3
+25oC
-
230
ns
VDD = 15V
1, 2, 3
+25oC
-
170
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25oC
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
80
ns
Maximum Clock Input Fre-
quency
FCL
VDD = 10V
1, 2, 3
+25oC5.0
-
MHz
VDD = 15V
1, 2, 3
+25oC5.5
-
MHz
Minimum Setup Time
Clock Inhibit to Clock
Setup
TS
VDD = 5V
1, 2, 3
+25oC
-
230
ns
VDD = 10V
1, 2, 3
+25oC
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
70
ns
Minimum Reset Pulse
Width
TW
VDD = 5V
1, 2, 3
+25oC
-
260
ns
VDD = 10V
1, 2, 3
+25oC
-
110
ns
VDD = 15V
1, 2, 3
+25oC
-
60
ns
Minimum Clock Pulse
Width
TW
VDD = 5V
1, 2, 3
+25oC
-
200
ns
VDD = 10V
1, 2, 3
+25oC
-
90
ns
VDD = 15V
1, 2, 3
+25oC
-
60
ns
Input Capacitance
CIN
Any Input
1, 2
+25oC-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25oC-
25
A
N Threshold Voltage
VTN
VDD = 10V, ISS = -10
A1, 4
+25oC-2.8
-0.7
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A1, 4
+25oC-
1V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A1, 4
+25oC0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A1, 4
+25oC-
1V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25oCVOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25oC
-
1.35 x
+25oC
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25oC limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
 1.0A
Output Current (Sink)
IOL5
 20% x Pre-Test Reading
Output Current (Source)
IOH5A
 20% x Pre-Test Reading
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX



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