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IXTP3N100D2 Arkusz danych(PDF) 1 Page - IXYS Corporation

Numer części IXTP3N100D2
Szczegółowy opis  N-Channel MOSFET
PDF  6 Pages
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP3N100D2 Arkusz danych(HTML) 1 Page - IXYS Corporation

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Symbol
Test Conditions
Maximum Ratings
V
DSX
T
J
= 25
C to 150C
1000
V
V
GSX
Continuous
20
V
V
GSM
Transient
30
V
P
D
T
C = 25C
125
W
T
J
- 55 ... +150
C
T
JM
150
C
T
stg
- 55 ... +150
C
T
L
Maximum Lead Temperature for Soldering
300
°C
T
SOLD
1.6 mm (0.062in.) from Case for 10s
260
°C
M
d
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
2.5
g
TO-220
3.0
g
DS100184E(4/17)
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSX
V
GS = - 5V, ID = 250A
1000
V
V
GS(off)
V
DS = 25V, ID = 250A
- 2.5
- 4.5
V
I
GSX
V
GS = 20V, VDS = 0V
100 nA
I
DSX(off)
V
DS = VDSX, VGS = - 5V
5
A
T
J = 125C
50
A
R
DS(on)
V
GS = 0V, ID = 1.5A, Note 1
6
I
D(on)
V
GS = 0V, VDS = 50V, Note 1
3
A
IXTA3N100D2
IXTP3N100D2
V
DSX
=
1000V
I
D(on)
>
3A
R
DS(on)

6
Features
• Normally ON Mode
 International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
Depletion Mode
MOSFET
N-Channel
G = Gate
D
= Drain
S = Source
Tab = Drain
TO-263 AA (IXTA)
G D
S
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)
G
D
S


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