IF1801 datasheet(1/1 Pages) INTERFET

Numer części	IF1801

Szczegółowy opis	N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

Scroll/Zoom	100%

Producent	INTERFET [InterFET Corporation]

Strona internetowa	http://www.interfet.com

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1 / 1 page

01/99

B-33

IF1801

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings = TA at 25¡C

Reverse Gate Source Voltage & Gate Drain Voltage

– 20 V

Continuous Forward Gate Current

10 mA

Continuous Device Power Dissipation

300 mW

Power Derating

2 mW/°C

Storage Temperature Range

– 65°C to 200°C

TOÐ52 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

At 25°C free air temperature:

IF1801

Process NJ1800DL

Static Electrical Characteristics

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 20

V

IG = – 1 µA, VDS = ØV

Gate Reverse Current

IGSS

– 0.1

nA

VGS = – 10V, VDS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

– 0.35

– 2

V

VDS = 10V, ID = 0.5 nA

Drain Saturation Current (Pulsed)

IDSS

30

mA

VDS = 10V, VGS = ØV

Dynamic Electrical Characteristics

Common Source

gfs

50

mS

VDS = 10V, ID = 5 mA

f = 1 kHz

Forward Transconductance

Common Source Input Capacitance

Ciss

100

pF

VDS = 10V, ID = 5 mA

f = 1 MHz

Common Source

Crss

50

pF

VDS = 10V, ID = 5 mA

f = 1 MHz

Reverse Transfer Capacitance

Typ

Equivalent Short Circuit

¯eN

0.5

nV/

√Hz V

DG = 4 V, ID = 5 mA

f = 1 kHz

Input Noise Voltage

¥ Low-Noise, High Gain Amplifier

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page B-33

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