K4S560432E-UC datasheet(8/14 Pages) SAMSUNG

8 / 14 page

SDRAM 256Mb E-die (x4, x8, x16)

CMOS SDRAM

Rev. 1.3 August 2004

SDRAM 256Mb E-die (x4, x8, x16)

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit

Note

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4banks Activated.

tCCD = 2CLKs

100

Refresh current

ICC5

tRC

≥ tRC(min)

180

Self refresh current

ICC6

CKE

≤ 0.2V

L1.5

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S5604(08)32E-UC

4. K4S5604(08)32E-UL

5. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

Notes :

DC CHARACTERISTICS (x4, x8)

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