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IXFN82N60P Arkusz danych(PDF) 4 Page - IXYS Corporation |
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IXFN82N60P Arkusz danych(HTML) 4 Page - IXYS Corporation |
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4 / 6 page ![]() IXFN82N60P IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance 0 20 40 60 80 100 120 3.5 4 4.5 5 5.5 6 6.5 7 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 ID - Amperes TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 50 100 150 200 250 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs VDS = 300V I D = 41A I G = 10mA Fig. 11. Capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 1 10 100 1,000 10 100 1000 VDS - Volts 1ms 100µs RDS(on) Limit 10ms DC TJ = 150ºC TC = 25ºC Single Pulse |
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