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IXTP3N100P Arkusz danych(PDF) 4 Page - IXYS Corporation |
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IXTP3N100P Arkusz danych(HTML) 4 Page - IXYS Corporation |
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4 / 7 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA3N100P IXTP3N100P IXTH3N100P Fig. 7. Input Admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3.03.5 4.04.5 5.05.5 6.06.5 VGS - Volts TJ = 125 oC 25 oC - 40 oC Fig. 8. Transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ID - Amperes TJ = - 40 oC 125 oC 25 oC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 1 2 3 4 5 6 7 8 9 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs VDS = 500V I D = 1.5A I G = 1mA Fig. 11. Capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 0.1 1 10 10 100 1,000 VDS - Volts TJ = 150 oC TC = 25 oC Single Pulse 100μs 1ms RDS(on) Limit 10ms |
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