BUH150 datasheet(2/10 Pages) ONSEMI

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BUH150

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

VCEO(sus)

400

460

Vdc

Collector–Base Breakdown Voltage

(ICBO = 1 mA)

VCBO

700

860

Vdc

Emitter–Base Breakdown Voltage

(IEBO = 1 mA)

VEBO

12.3

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ICEO

100

µAdc

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

@ TC = 25°C

@ TC = 125°C

ICES

100

1000

µAdc

Collector Base Current

(VCB = Rated VCBO, VEB = 0)

@ TC = 25°C

@ TC = 125°C

ICBO

100

1000

µAdc

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

IEBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

VBE(sat)

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C

@ TC = 125°C

VCE(sat)

0.16

0.15

0.4

Vdc

(IC = 10 Adc, IB = 2 Adc)

@ TC = 25°C

0.45

Vdc

(IC = 20 Adc, IB = 4 Adc)

@ TC = 25°C

Vdc

DC Current Gain (IC = 20 Adc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

hFE

2.5

4.5

—

DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

—

DC Current Gain (IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

—

DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc)

@ TC = 25°C

—

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

Voltage:

Determined 3

µs after

rising IB1 reaches

90% of final IB1

(see Figure 19)

IC = 5 Adc, IB1 = 1 Adc

VCC = 300 V

@ TC = 25°C

VCE(dsat)

1.5

Voltage:

Determined 3

µs after

rising IB1 reaches

90% of final IB1

(see Figure 19)

IC = 5 Adc, IB1 = 1 Adc

VCC = 300 V

@ TC = 125°C

2.8

µs after

rising IB1 reaches

90% of final IB1

(see Figure 19)

IC = 10 Adc, IB1 = 2 Adc

VCC = 300 V

@ TC = 25°C

2.4

90% of final IB1

(see Figure 19)

IC = 10 Adc, IB1 = 2 Adc

VCC = 300 V

@ TC = 125°C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

100

150

Input Capacitance

(VEB = 8 Vdc, f = 1 MHz)

Cib

1300

1750

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