SC2065FCT datasheet(2/5 Pages) JINGHENG

Numer części	SC2065FCT

Szczegółowy opis	Silicon Carbide Schottky Diode

PDF	5 Pages

Scroll/Zoom	100%

Producent	JINGHENG [Jinan Jing Heng Electronics Co., Ltd.]

Strona internetowa	http://www.jinghenggroup.com/

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2 / 5 page

MAXIMUM RATINGS

(Ratings at 25℃ ambient temperature unless otherwise specified )

Parameter

Symbol

Value（leg/device)

Unit

Maximum repetitive peak reverse voltage

R R M

650

Continuous Forward Current for Rth

( j - c )

10/20（T ≤131℃ TO-220/TO-263)

10/20（Tc≤91℃ ITO-220)

Non-Repetitive Forward Surge Current

（Half-Sine Pulse,tp=8.3mS)

F, S M

75/ 150(Tc=25℃)

60/120(Tc=150℃)

I t value

∫i t

23/92（Tc=25℃ ）

15/60（Tc=150℃ ）

A S

Diode dv/dt ruggedness(VR=0...960V)

dv/dt

V/nS

Power dissipation for R

（Tc=25℃）

t h ( j - c , m a x )

t o t

125(TO-220/TO-263)

60(TO-252/ITO-220)

Operating junction temperature range

-55...175

℃

Storage temperature range

Tstg

-55...175

℃

RATINGS AND CHARACTERISTIC OF SC2065XX

JINAN JINGHENG ELECTRONICS

CO., LTD.

HTTP

://WWW.JINGHENG.CN

5-2

THERMAL CHARACTERISTCS（TA=25℃ Unless otherwise noted)

Paramerter

Symbol

ITO-220AC

TO-220AC

TO-263AC

Unit

Diode thermal resistance

junction-case(device)

t h ( j - c )

2.5

1.2

K/W

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