ABV2005/-06/-07/-08/-09

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

30332 Esperanza., Rancho Santa Margarita, Ca 92688 Ph: 949-546-8000 Fax: 949-546-8001 www.Abracon.com 03/21/05 Page 3

ELECTRICAL SPECIFICATIONS

1. Absolute Maximum Ratings

PARAMETERS

SYMBOL

MIN.

MAX.

UNITS

Supply Voltage

4.6

V

Input Voltage, dc

-0.5

V

Output Voltage, dc

-0.5

V

Storage Temperature

-65

150

°C

Ambient Operating Temperature*

-40

85

°C

Junction Temperature

125

°C

Lead Temperature (soldering, 10s)

260

°C

ESD Protection, Human Body Model

2

kV

Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the

device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other

conditions above the operational limits noted in this specification is not implied.

* Note: Operating Temperature is guaranteed by design for all parts (COMMERCIAL and INDUSTRIAL), but tested for COMMERCIAL grade only.

2. Crystal Specifications

3. Voltage Controlled Crystal Oscillator

PARAMETERS

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

VCXO Stabilization Time *

From power valid

10

ms

VCXO Tuning Range

0V

≤ VCON ≤ 3.3V

200*

ppm

CLK output pullability

VCON=1.65V,

±1.65V

±100*

ppm

On-chip Varicaps control range

VCON = 0 to 3.3V

4 – 18*

pF

Linearity

10*

%

VCXO Tuning Characteristic

65

ppm/V

VCON input impedance

60

k

Ω

VCON modulation BW

0V

≤ VCON ≤ 3.3V, -3dB

25

kHz

Note: Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.

PARAMETERS

SYMBOL

CONDITIONS

MIN.

MAX.

UNITS

Crystal Resonator Frequency

Parallel Fundamental Mode

100

200

MHz

Crystal Loading Rating

Die at VCON = 1.65V

4

pF

Interelectrode Capacitance

3.5

pF

Crystal Pullability

AT cut

250

-

Recommended ESR

AT cut

30

Ω