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© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

N07

70

V

N06

60

V

V

DGR

T

N07

70

V

N06

60

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

200N06/200N07

200

A

180N07

180

A

I

L(RMS)

Terminal current limit

100

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

600

A

I

AR

T

C

= 25

°C

100

A

E

AR

T

C

= 25

°C30

mJ

E

AS

T

C

= 25

°C

2

J

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

520

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13Nm/lb.in.

Terminal connection torque

1.5/13Nm/lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

N06

60

V

N07

70

V

V

GS (th)

V

2

4

V

I

GSS

V

±200

nA

I

DSS

V

T

J

= 25

°C

400

mA

V

T

mA

R

DS(on)

V

200N06/200N07

6 m

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

180N07

7 m

W

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

• International standard packages

• miniBLOC with Aluminium nitride

isolation

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

97533A (9/99)

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

V

DSS

I

D25

R

DS(on)

IXFN 200 N06

60 V

200 A

6 m

W

IXFN 180 N07

70 V

180 A

7 m

W

IXFN 200 N07

70 V

200 A

6 m

W

t

IXYS reserves the right to change limits, test conditions, and dimensions.