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PJM3404NSA Arkusz danych(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM3404NSA Arkusz danych(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 7 page ![]() Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed Note1 IDM 20 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance,Junction-to-Ambient Note2 RθJA 139 ℃ / W PJM3404NSA N- Enhancement Mode Field Effect Transistor 1 / 7 1 2 Gate Source 3Drain Applications Load switch and in PWM applications Features VDS = 30V,ID = 5.8A RDS(ON) < 28mΩ @ VGS=10V RDS(ON) < 40mΩ @ VGS=4.5V Low Gate Charge and RDS(on) High power and current handing capability Schematic diagram Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Characteristics www.pingjingsemi.com Revision:1.0 Jun-2019 SOT-23 1. Gate 2.Source 3.Drain Marking: R4 |
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