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PJM3420NSA Arkusz danych(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Numer części PJM3420NSA
Szczegółowy opis  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Producent  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Strona internetowa  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3420NSA Arkusz danych(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM3420NSA
N- Enhancement Mode Field Effect Transistor
2 / 6
www.pingjingsemi.com
Revision：1.0 Sep-2018
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Static Parameters
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
20
--
--
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
--
--
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
--
--
±100
nA
Gate Threshold Voltage
VGS(th) VDS=VGS, ID=250µA
0.5
--
1
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=6A
--
--
29
mΩ
VGS=4.5V, ID=5A
--
--
35
mΩ
VGS=2.5V, ID=4A
--
--
48
mΩ
VGS=1.8V, ID=2A
--
--
91
mΩ
Body Diode Forward Voltage
VSD
IS=1A, VGS=0V
--
--
1
V
Dynamic Parameters
Forward Transconductance
gFS
VDS=5V, ID=3.8A
4
--
--
S
Input Capacitance
Ciss
VGS=0V, VDS=10V, f=1MHz
--
630
--
pF
Output Capacitance
Coss
--
164
--
pF
Reverse Transfer Capacitance
Crss
--
137
--
pF
Switching Parameters
Total Gate Charge (10V)
Qg
VGS=10V, VDS=10V, ID=6A
--
12.5
--
nC
Total Gate Charge (4.5V)
--
6
--
nC
Gate Source Charge
Qgs
--
1
--
nC
Gate Drain Charge
Qgd
--
2
--
nC
Turn-On DelayTime
tD(on)
VGS=5V, VDS=10V,
RGEN =6 Ω, RL=1.7 Ω
--
5.5
--
ns
Turn-On Rise Time
tr
--
14
--
ns
Turn-Off DelayTime
tD(off)
--
29
--
ns
Turn-Off Fall Time
tf
--
10.2
--
ns
Electrical Characteristics (Ta = 25℃)



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