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ES2DF Arkusz danych(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

Numer części ES2DF
Szczegółowy opis  SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
PDF  3 Pages
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Producent  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
Strona internetowa  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

ES2DF Arkusz danych(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

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SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
DN:T19712A0
https://www.microdiode.com
Rev:2019A0
Page :1
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere
ES2AF THRU ES2JF
Mechanical Data
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated
placement High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Glass passivated chip junction
Case : JEDEC SMAF Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.00095 ounce, 0.027 grams
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum Ratings And Electrical Characteristics
Parameter
SYMBOLS
ES
2AF ES2BF ES2CF ES2DF ES2EF ES2GF ES2JF
UNITS
Marking Code
MDD
ES
2AF
MDD
ES
2BF
MDD
ES
2CF
MDD
ES
2DF
MDD
ES
2EF
MDD
ES
2GF
MDD
ES
2JF
Maximum repetitive peak reverse voltage
VRMM
50
100
150
200
300
400
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
600
V
Maximum average forward rectified current
at TL=55℃
I(AV)
2.0
A
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
IFSM
30
A
Maximum instantaneous forward voltage at
2.0A
VF
1
1.25
1.
68
V
TA=25℃
Maximum DC reverse current
at rated DCblocking voltage
TA=125℃
IR
5.0
100.0
μA
Maximum reverse recovery time
(NOTE 1)
trr
35
ns
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
RJA
80.0
℃/
W
Operating junction and storage temperature range
TJ,TSTG
-55to+150
Note:
1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.The typical data above is for referenceonly.
Dimensions in inches and (millimeters)
SMAF
0.193(4.90)
0.173(4.40)
0.047(1.20)
0.031(0.80)
0.008(0.20)
0.005(0.12)
0.047(1.20)
0.035(0.90)
0.146(3.70)
0.130(3.30)
0.063 (1.60)
0.051 (1.30)
0.106(2.70)
0.094(2.40)


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