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BAS521 Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części BAS521
Szczegółowy opis  High voltage switching diode
PDF  8 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS521 Arkusz danych(HTML) 2 Page - NXP Semiconductors

  BAS521 Datasheet HTML 1Page - NXP Semiconductors BAS521 Datasheet HTML 2Page - NXP Semiconductors BAS521 Datasheet HTML 3Page - NXP Semiconductors BAS521 Datasheet HTML 4Page - NXP Semiconductors BAS521 Datasheet HTML 5Page - NXP Semiconductors BAS521 Datasheet HTML 6Page - NXP Semiconductors BAS521 Datasheet HTML 7Page - NXP Semiconductors BAS521 Datasheet HTML 8Page - NXP Semiconductors  
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2003 Aug 12
2
Philips Semiconductors
Product specification
High voltage switching diode
BAS521
FEATURES
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Repetitive peak forward current: 625 mA
• Ultra small plastic SMD package.
APPLICATIONS
• High speed switching
• High voltage switching.
DESCRIPTION
The BAS521 is a high-voltage switching diode fabricated
in planar technology and encapsulated in an ultra small
SOD523 (SC-79) plastic SMD package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage12


Top view
MAM408
Fig.1
Simplified outline (SOD523; SC-79), and
symbol.
Marking code: L4.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the absolute Maximum Rating System (IEC 60134).
Note
1. Ts is the temperature at the soldering point of the cathode tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
300
V
VRRM
repetitive peak reverse voltage
300
V
IF
continuous forward current
Ts ≤ 90 °C; note 1
250
mA
IFRM
repetitive peak forward current
tp = 1 ms; δ = 0.25
1A
IFSM
non-repetitive peak forward current
tp =1 µs; square wave; Tj =25 °C
prior to surge
4.5
A
Ptot
total power dissipation
Ts ≤ 90 °C; note 1
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C



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