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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IXTP300N04T2 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP300N04T2 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTP300N04T2 · FEATURES · Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V · Fully characterized avalanche voltage and current · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · DC/DC Converters · High Current Switching Applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 300 A IDM Drain Current-Single Pulsed 900 A PD Total Dissipation @TC=25℃ 480 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 0.313 ℃ /W |
Podobny numer części - IXTP300N04T2 |
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Podobny opis - IXTP300N04T2 |
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