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UT3N06G-AE3-R Arkusz danych(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Numer części UT3N06G-AE3-R
Szczegółowy opis  N-Channel 60-V (D-S) MOSFET
PDF  9 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT3N06G-AE3-R Arkusz danych(HTML) 5 Page - VBsemi Electronics Co.,Ltd

  UT3N06G-AE3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT3N06G-AE3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
1
2
3 0
4
5
0
255075
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
0.0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
0
25
50
75
100
125
150
TA -Ambient Temperature (°C)
UT3N06G-AE3-R
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
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