UT8205AG-AG6-R datasheet(1/8 Pages) VBSEMI

Numer części	UT8205AG-AG6-R

Szczegółowy opis	Dual N-Channel MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Producent	VBSEMI [VBsemi Electronics Co.,Ltd]

Strona internetowa	www.VBsemi.com

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1 / 8 page

Dual N-Channel MOSFET

FEATURES

•

Halogen-free Option Available

•

TrenchFET® Power MOSFETs

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

20

0.024 at VGS = 4.5 V

6.0

0.028 at VGS = 2.5 V

5.0

Notes:

a. Surface Mounted on FR4 board, t

≤ 10 s.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

6.0

5.2

A

TA = 70 °C

4.8

4.2

Pulsed Drain Current

IDM

30

Continuous Source Current (Diode Conduction)a

IS

1.5

1.0

Maximum Power Dissipationa

TA = 25 °C

PD

1.5

1.0

W

TA = 70 °C

0.96

0.64

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

72

83

°C/W

Steady State

100

120

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

55

70

Available

Pb-free

RoHS*

COMPLIANT

G1

S1

G2

D

S2

D

D1/D2

TSOP6

Top View

S2

D1/D2

S1

G2

G1

1

2

3

6

5

4

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

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