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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IXTA2N80 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTA2N80 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTA2N80 · FEATURES · Static drain-source on-resistance: RDS(on) ≤ 6.2Ω@VGS=10V · Fully characterized avalanche voltage and current · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · DC/DC Converter · Switch-Mode and Resonant-Mode Power Supplies · Uninterrupted Power Supplies · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pulsed 8 A PD Total Dissipation @TC=25℃ 54 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 2.31 ℃ /W |
Podobny numer części - IXTA2N80 |
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Podobny opis - IXTA2N80 |
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