BTT6200-4ESA datasheet(21/51 Pages) INFINEON

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undervoltage behavior.vsd

VOUT

VS(OP)

VS(UV)

Figure 16

Undervoltage behavior

6.3

Overvoltage protection

There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism

operates properly in the application, the current in the Zener diode has to be limited by a ground resistor.

Figure 17 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than

VS(AZ), the power transistor switches ON and in addition the voltage across the logic section is clamped. As a

result, the internal ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx,

DSELx, and DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the

case the device was ON, prior to overvoltage, the BTT6200-4ESA remains ON. In the case the BTT6200-4ESA was

OFF, prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above

VBAT(SC) and below VDS(AZ), the output transistor is still operational and follows the input. If at least one channel

is in the ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply

voltage range. This especially impacts the short circuit robustness, as well as the maximum energy EAS

capability. ZGND is recommended to be a resistor in series to a diode.

PROFET™+ 24V

BTT6200-4ESA

Protection functions

Datasheet

Rev. 1.00

2019-03-09

BTT6200-4ESA Arkusz danych(PDF) 21 Page - Infineon Technologies AG