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MJE15028 Arkusz danych(PDF) 2 Page - ON Semiconductor |
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MJE15028 Arkusz danych(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) MJE15028, MJE15029 MJE15030, MJE15031 VCEO(sus) 120 150 − − Vdc Collector Cutoff Current (VCE = 120 Vdc, IB = 0) MJE15028, MJE15029 (VCE = 150 Vdc, IB = 0) MJE15030, MJE15031 ICEO − − 0.1 0.1 mAdc Collector Cutoff Current (VCB = 120 Vdc, IE = 0) MJE15028, MJE15029 (VCB = 150 Vdc, IE = 0) MJE15030, MJE15031 ICBO − − 10 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) hFE 40 40 40 20 − − − − − DC Current Gain Linearity (VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) (NPN to PNP) hFE Typ 2 3 Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.0 Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT 30 − MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = ⎪hfe⎪• ftest. 0 Figure 1. Power Derating T, TEMPERATURE ( °C) 0 40 60 100 120 160 40 TC 20 60 0 2.0 TA 1.0 3.0 80 140 TC TA 20 |
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