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PJM3400NSA Arkusz danych(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Numer części PJM3400NSA
Szczegółowy opis  N- Enhancement Mode Field Effect Transistor
PDF  8 Pages
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Producent  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Strona internetowa  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3400NSA Arkusz danych(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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Parameter
Symbol
Condition
Min Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V ID=250μA
30
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage Note3
VGS(th)
VDS=VGS,ID=250μA
0.7
0.9
1.4
V
Drain-Source On-State Resistance Note3
RDS(ON)
VGS=2.5V, ID=4A
-
45
59
mΩ
VGS=4.5V, ID=5A
-
31
45
mΩ
VGS=10V, ID=5.8A
-
28
41
mΩ
Forward Transconductance Note3
gFS
VDS=5V,ID=5A
10
-
-
S
Dynamic Characteristics
Input Capacitance
Clss
VDS=15V,VGS=0V,
f=1.0MHz
-
820
-
pF
Output Capacitance
Coss
-
99
-
pF
Reverse Transfer Capacitance
Crss
-
77
-
pF
Switching Characteristics
Turn-on Delay Time
td(on)
VDD=15V, RL=2.7Ω
VGS=10V,RGEN=3Ω
-
3.3
-
nS
Turn-on Rise Time
tr
-
4.8
-
nS
Turn-Off Delay Time
td(off)
-
26
-
nS
Turn-Off Fall Time
tf
-
4
-
nS
Total Gate Charge
Qg
VDS=15V,ID=5.8A,
VGS=4.5V
-
9.5
-
nC
Gate-Source Charge
Qgs
-
1.5
-
nC
Gate-Drain Charge
Qgd
-
3
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage Note3
VSD
VGS=0V,IS=5.8A
-
-
1.2
V
Diode Forward Current Note2
IS
-
-
5.8
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
PJM3400NSA
N- Enhancement Mode Field Effect Transistor
2 / 8
www.pingjingsemi.com
Revision：1.1 Dec-2018
www.pingjingsemi.com
Revision：1.1 Dec-2018
Electrical Characteristics
(TA=25℃ unless otherwise noted)
-
Static Characteristics
www.pingjingsemi.com
Revision：2.0 Jun-2019



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