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PJM3415PSC Arkusz danych(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM3415PSC Arkusz danych(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  PJM3415PSC Silicon P-Channel Power MOSFET 1 / 6 Features Low Gate Charge and RDS(on) ESD protected(HBM) up to 2KV Application Load switch and in PWM applicatopns D S G 1. Gate 2.Source 3.Drain Schematic Diagram Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Maximum Units Drain-Source Voltage -VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current -ID 4 A Power Dissipation PD 1.4 W Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 89 °C/W www.pingjingsemi.com Revision： 1.0 Oct-2019 SOT-23-3 2 1 3 |
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