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9NE90 Arkusz danych(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

Numer części 9NE90
Szczegółowy opis  9A 900V N-channel Enhancement Mode Power MOSFET
PDF  11 Pages
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Producent  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
Strona internetowa  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

9NE90 Arkusz danych(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 2 of 11
9NE90
4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
VALUE
UNIT
MIN
TYP
MAX
Off Characteristics
Drain-source
Breakdown Voltage
BVDSS
ID=250μA,VGS=0V
900
--
--
V
Drain-to-Source
Leakage Current
IDSS
VDS=900V,VGS=0V,TC=25℃
--
--
25
μA
VDS=720V,VGS=0V,TC=125℃
--
--
250
μA
Gate-to-Source
Forward Leakage
IGSSF
VGS=+20V
--
--
10
μA
Gate-to-Source
Reverse Leakage
IGSSR
VGS=-20V
--
--
-10
μA
On Characteristics
(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
2
--
4
V
Drain-source on Resist
ance
RDS(on)
VGS=10V,ID=4.5A
--
0.9
1.3
Ω
Dynamic Characteristics
(Note 4)
Forward Transfer cond
uctance
gfs
VDS=15V,ID=4.5A
--
10
--
S
Input Capacitance
Ciss
VGS=0V,VDS=25V,f=1.0MHz
--
2712
--
pF
Output Capacitance
Coss
--
205
--
Reverse Transfer Cap
acitance
Crss
--
18
--
Switching Characteristics
(note4)
Turn-on Delay Time
td(on)
ID=9A,
VDD=450V,
VGS=10V,
RG=4.7Ω
--
15
--
nS
Turn-on Rise Time
tr
--
8
--
nS
Turn-off Delay Time
td(off)
--
69
--
nS
Turn-off Fall Time
tf
--
25
--
nS
Total Gate Charge
Qg
ID=9A,VDD=450V,VGS=10V
--
62
--
nC
Gate-to-Source Charge
Qgs
--
10
--
Gate-to-
Drain(“Miller”)C
harge
Qgd
--
21
--
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=9A
--
--
1.5
V
Diode Forward Current
(Note 2)
IS
--
--
9
A
Reverse Recovery Time
trr
TJ=25℃,IF=9A,
dIF/dt=100A/μS,VGS=0V
--
305
--
nS
Reverse Recovery
Charge
Qrr
--
1960
--
nC
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=8.4A,VDD=50V,VGATE=900V,Start TJ=25℃.
6. ISD=9A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.



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