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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FSJ4N65 Arkusz danych(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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FSJ4N65 Arkusz danych(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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2 / 11 page  ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 2 of 11 FSJ4N65 4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted) PARAMETER SYMBOL Test Condition VALUE UNIT MIN TYP MAX Off Characteristics Drain-source Breakdown Voltage BVDSS ID=250μA,VGS=0V 650 -- -- V Drain-to-Source Leakage Current IDSS VDS=650V,VGS=0V,TC=25℃ -- -- 1 μA VDS=650V,VGS=0V,TC=125℃ -- -- 50 μA Gate-to-Source Forward Leakage IGSSF VGS=+30V -- -- 100 nA Gate-to-Source Reverse Leakage IGSSR VGS=-30V -- -- -100 nA On Characteristics (Note 5) Gate threshold voltage VGS(th) VDS=VGS,ID=250μA 2.5 3 3.5 V Drain-source on Resistance RDS(on) VGS=10V,ID=2.5A -- 1 1.2 Ω Dynamic Characteristics (Note 6) Forward Transfer conductance gfs VDS=20V,ID=2.5A -- 4 -- S Input Capacitance Ciss VGS=0V,VDS=50V,f=1.0MHz -- 280 -- pF Output Capacitance Coss -- 26 -- Reverse Transfer Capacitance Crss -- 2.3 -- Switching Characteristics (note6) Turn-on Delay Time td(on) ID=2.5A, VDD=380V, RG=20Ω VGS=10V -- 6 -- nS Turn-on Rise Time tr -- 3 -- nS Turn-off Delay Time td(off) -- 48 60 nS Turn-off Fall Time tf -- 8 15 nS Total Gate Charge Qg ID=4A,VDD=480V,VGS=10V -- 6.5 -- nC Gate-to-Source Charge Qgs -- 1.3 -- Gate-to-Drain(“Miller”)Ch arge Qgd -- 2.5 -- Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VFSD VGS=0V,IS=4A -- 1 1.3 V Diode Forward Current (Note 2) IS -- -- 4 A Reverse Recovery Time trr TJ=25℃,IS=4A, dIi/dt=100A/μS,VGS=0V -- 150 -- nS Reverse Recovery Charge Qrr -- 0.85 -- uC Maximum Pulsed Current(Body Diode) ISM -- 11 -- A Notes： 1. VDD=50V,VG=10V, R G =25Ω, Start TJ=25℃. 2. ISD=4A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃. 3: Repetitive rating, pulse width limited by maximum junction temperature. 4: Surface mounted on FR4 Board, t≤10sec. 5: Pulse width ≤ 300μs, duty cycle ≤ 2%. 6: Guaranteed by design, not subject to production. |
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