2SJ668. datasheet(1/7 Pages) VBSEMI

Numer części	2SJ668.

Szczegółowy opis	P-Channel 4 0 V (D-S) MOSFET

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Producent	VBSEMI [VBsemi Electronics Co.,Ltd]

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P-Channel 4 0 V (D-S) MOSFET

FEATURES

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

- 40

0.010 at VGS = - 10 V

±

0.0

at VGS = - 4.5 V

±

S

G

D

P-Channel MOSFET

Notes:

a. Package limited.

b. Duty cycle

 1 %.

c. When mounted on 1" square PCB (FR-4 material).

d. See SOA curve for voltage derating.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 40

V

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

-

a

A

TC = 125 °C

- 52

Pulsed Drain Current

IDM

- 220

Avalanche Current

IAR

- 60

Repetitive Avalanche Energyb

L = 0.1 mH

EAR

180

mJ

Power Dissipation

TC = 25 °C

PD

45

W

TA = 25 °C

3.75

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient

PCB Mount (TO-263)c

RthJA

40

°C/W

Free Air (TO-220AB)

62.5

Junction-to-Case

RthJC

0.8

Available

RoHS*

COMPLIANT

14

55

54

55

TO-251

S

D

G

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2SJ668.

1

Podobny numer części - 2SJ668.

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