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2SC4495 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4495 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC4495 DESCRIPTION · High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) · High DC Current Gain- : hFE= 500(Min)@IC= 0.5A · Fast switching speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Audio temperature compensation and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Podobny numer części - 2SC4495 |
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Podobny opis - 2SC4495 |
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