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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ISCN224N Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN224N Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors ISCN224N DESCRIPTION · Low Collector Saturation Voltage : VCE(sat)=0.3V(Max)@ IC= 8A · Good Linearity of hFE · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - ISCN224N |
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Podobny opis - ISCN224N |
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