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IXFN36N60 Arkusz danych(PDF) 1 Page - IXYS Corporation |
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IXFN36N60 Arkusz danych(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 I XYS reserves the right to change limits, test conditions, and dimensions. IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 V DSS I D25 R DS(on) t rr IXFK/FN 36N60 600V 36A 0.18 Ω 250ns IXFK/FN 32N60 600V 32A 0.25 Ω 250ns Preliminary Data Symbol Test Conditions Maximum Ratings IXFK IXFN V DSS T J = 25 °C to 150°C 600 600 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 600 600 V V GS Continuous ±20 ±20 V V GSM Transient ±30 ±30 V I D25 T C = 25 °C, Chip capability 32N60 32 32 A 36N60 36 36 A I DM T C = 25°C, pulse width limited by TJM 32N60 128 128 A 36N60 144 144 A I AR T C = 25 °C20 20 A E AR T C = 25 °C30 30 mJ dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 5 V/ns T J ≤ 150°C, RG = 2 Ω P D T C = 25 °C 500 520 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in) from case for 10 s 300 - °C V ISOL 50/60 Hz, RMSt = 1 min - 2500 V~ I ISOL ≤ 1 mAt = 1 s - 3000 V~ M d Mounting torque 0.9/6 1.5/13 Nm/lb.in. Terminal connection torque - 1.5/13 Nm/lb.in. Weight 10 30 g Features • International standard packages • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density HiPerFETTMPower MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr 92807G (01/96) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. V DSS V GS = 0 V, I D = 1 mA 600 V V GH(th) V DS = V GS, ID = 8 mA 2 4.5 V I GSS V GS = ±20 V DC, VDS = 0 ±200 nA I DSS V DS = 0.8 V DSS T J = 25 °C 400 µA V GS = 0 V T J = 125°C2 mA R DS(on) V GS = 10 V, I D = 0.5 ID25 36N60 0.18 Ω Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60 0.25 Ω TO-264 AA (IXFK) S G D D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G D G = Gate D = Drain S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source ©1996 IXYS Corporation. All rights reserved. |
Podobny numer części - IXFN36N60 |
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Podobny opis - IXFN36N60 |
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