IXFN25N90 datasheet(1/4 Pages) IXYS

Numer części	IXFN25N90

Szczegółowy opis	HiPerFET Power MOSFETs Single Die MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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Features

• International standard package

• miniBLOC, with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3 mA

900

V

GH(th)

V

DS

= V

GS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±200 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J =

25

°C

100

mA

V

GS

= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 • ID25

26N90

0.30

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

25N90

0.33

W

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MW

900

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

26N90

26

A

25N90

25

I

DM

T

C

= 25

°C, pulse width limited by T

JM

26N90

104

A

25N90

100

I

AR

T

C

= 25

°C

26N90

26

A

25N90

25

E

AR

T

C

= 25

°C64

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS,

5

V/ns

T

J

£ 150°C, R

G = 2 W

P

D

T

C

= 25

°C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

J

1.6 mm (0.63 in) from case for 10 s

-

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL£ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.5/13

Nm/lb.in.

Weight

30

g

HiPerFETTM Power MOSFETs

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

97526E (10/99)

D

S

G

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

V

DSS

I

D (cont)

R

DS(on)

t

rr

900 V

26 A

0.30

W 250 ns

900 V

25 A

0.33

W 250 ns

IXFN 26N90

IXFN 25N90

Preliminary data sheet

IXYS reserves the right to change limits, test conditions, and dimensions.

Podobny numer części - IXFN25N90

Producent	Numer części	Arkusz danych	Szczegółowy opis
IXYS Corporation	IXFN25N90	122Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET

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IXFN25N90 Arkusz danych(PDF) 1 Page - IXYS Corporation

IXFN25N90 Arkusz danych(HTML) 1 Page - IXYS Corporation

Podobny numer części - IXFN25N90

Podobny opis - IXFN25N90

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