IXTH11P50 datasheet(1/4 Pages) IXYS

Numer części	IXTH11P50

Szczegółowy opis	Standard Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

-500

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

-500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

-11

A

I

DM

T

C = 25°C, pulse width limited by TJ

-44

A

I

AR

T

C = 25°C

-11

A

E

AR

T

C = 25°C30

mJ

P

D

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque

(TO-247)

1.13/10 Nm/lb.in.

Weight

TO-247 AD

6

g

TO-268

4

g

Standard Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = -250 µA

-500

V

BV

DSS Temperature Coefficient

0.054

%/K

V

GS(th)

V

DS = VGS, ID = -250 µA

-3.0

-5.0

V

GS(th) Temperature Coefficient

-0.122

%/K

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = 0.8 • VDSS

T

J =25° C

-200

µA

V

GS = 0 V

T

J = 125°C-1

mA

R

DS(on)

V

GS = -10 V, ID = 0.5 • ID25

0.75

Ω

R

DS(on) Temperature Coefficient

0.6 %/K

DS94535J(01/05)

TO-247 AD (IXTH)

G = Gate

D = Drain

S = Source

TAB = Drain

TO-268

(IXTT) Case Style

(TAB)

G

S

Features

International standard packages

Low R

DS (on) HDMOS

TM

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

D

(TAB)

D

V

DSS

= -500 V

I

D25

= -11 A

R

DS(on) =

0.75

Ω

IXTH 11P50

IXTT 11P50

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