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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AOB2606L Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AOB2606L Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 sc N-Channel MOSFET Transistor AOB2606L · FEATURES · Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Be suitable for synchronous rectification for server and general purpose applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 72 A IDM Drain Current-Single Pulsed 260 A PD Total Dissipation @TC=25℃ 115 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.3 ℃ /W |
Podobny numer części - AOB2606L |
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Podobny opis - AOB2606L |
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