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HVB187YP Arkusz danych(PDF) 2 Page - Renesas Technology Corp |
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HVB187YP Arkusz danych(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page ![]() HVB187YP Rev.1.00 Dec 16, 2004 page 2 of 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Reverse voltage VR 60 V Forward current IF 50 mA Power dissipation Pd * 1 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note: 1. Per one device. Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 60 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 2.4 pF VR = 0 V, f = 1 MHz Forward resistance rf 3. 5 — 5.5 Ω IF = 10 mA, f = 100 MHz ESD-Capability * 1 — 200 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Note : 1. Failure criterion; IR > 100 nA at VR = 60 V |
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