FSH10A10B datasheet(1/6 Pages) NIEC

Numer części	FSH10A10B

Szczegółowy opis	Schottky Barrier Diode

PDF	6 Pages

Scroll/Zoom	100%

Producent	NIEC [Nihon Inter Electronics Corporation]

Strona internetowa	http://www.niec.co.jp

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1 / 6 page

SBD Type :

FSH

FSH10

10

10A

A

A10B

10B

OULINE DRAWING

Maximum Ratings

Approx Net Weight: 1.75g

Rating

Symbol

FSH10A10B

Unit

Repetitive Peak Reverse Voltage

VRRM

100

V

Average Rectified Output Current

IO

10

Tc=120

°C

50 Hz half Sine Wave

Resistive Load

A

RMS Forward Current

IF(RMS)

15.7

A

Surge Forward Current

IFSM

180

50Hz Half Sine Wave ,1cycle

Non-repetitive

A

Operating JunctionTemperature Range

Tjw

-40 to +150

°C

Storage Temperature Range

Tstg

-40 to +150

°C

Mounting torque

Ftor

recommended torque = 0.5

N•m

Electrical

• Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Peak Reverse Current

IRM

Tj= 25

°C, VRM= VRRM

-

1

mA

Peak Forward Voltage

VFM

Tj= 25

°C, IFM= 10 A

-

0.88

V

Rth(j-c) Junction to Case

-

3

°C /W

Thermal Resistance

Rth(c-f) Cace to Fin

-

1.5

°C /W

FEATURES

*Similar to TO-220AB Case

*Fully Molded Isolation

*Low Forward Voltage Drop

*Low Power Loss,High Efficiency

*High Surge Capability

*Tj=150

°C operation

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