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Zakładka z wyszukiwarką danych komponentów |
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LCE01P30K Arkusz danych(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCE01P30K Arkusz danych(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  LCE01P30K Description The LCE01P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Portable equipment and battery powered systems 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE01P30K LCE01P30K TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100℃) ID (100℃) -21 A Pulsed Drain Current IDM -150 A Maximum Power Dissipation PD 120 W Derating factor 0.8 W/℃ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc 1.25 /W ℃ P-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2018 1/6 |
Podobny numer części - LCE01P30K |
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Podobny opis - LCE01P30K |
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