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LM10110 Arkusz danych(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Numer części LM10110
Szczegółowy opis  N-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Producent  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Strona internetowa  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM10110 Arkusz danych(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=250μA
100
V
I
DSS
Zero Gate Voltage Drain Current
V
DS=100V,VGS=0V
1
μA
I
GSS
Gate-Body Leakage Current
V
GS=±20V,VDS=0V
±
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250μA
1.2
1.6
2.5
V
R
DS(ON)
Drain-Source On-State
Resistance
V
GS=10V, ID=10A
90
110
mΩ
V
GS=4.5V, ID=8A
100
125
mΩ
DYNAMIC PARAMETERS
Ciss
Input Capacitance
V
DS=25V,VGS=0V,
F=1.0MHz
1400
pF
Coss
Output Capacitance
60
pF
Crss
Reverse Transfer Capacitance
35
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
V
DD=50V,ID=1A,
V
GS=10V,
R
G=6Ω
18
nS
tr
Turn-on Rise Time
4
nS
td(off)
Turn-Off Delay Time
40
nS
tf
Turn-Off Fall Time
3
nS
Qg
Total Gate Charge
V
DS=50V,ID=2A,
VGS=10V
20
nC
Qgs
Gate-Source Charge
3.2
nC
Qgd
Gate-Drain Charge
3.6
nC
Rg
Gate resistance
VGS=0V, VDS=0V,
F=1MHz
2
Ω
VSD
Diode Forward Voltage
VGS=0V,ISD=1A
0.7
1.2
V
Note：
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=50V,VGS=10V,L=0.1mH,IAS=12A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
LM10110
Rev :
www.leiditech.com
01.06.2018
2/5



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