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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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LMSS84W Arkusz danych(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LMSS84W Arkusz danych(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 4 page  SOT –323 Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. • Energy Efficient • Miniature SOT–323 Surface Mount Package Saves Board Space Symbol Value Unit Drain–to–Source Voltage VDSS -50 Vdc Gate–to–Source Voltage – Continuous VGS ± 20 Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) ID IDM -130 -520 mA Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ,Tstg – 55 to 150 °C Thermal Resistance – Junction–to–Ambient RθJA 556 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Rating MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ° 3 Drain 1 2 - Gate Source Marking Diagram PD W W = Work Week • Pb-Free Package is available. Device Package Shipping SOT-323 10000/Tape&Reel ORDERING INFORMATION LMSS84W SOT-323 3000/Tape&Reel LMSS84W THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C LMSS84W Rev : 01.06.2014 1/4 www.leiditech.com |
Podobny numer części - LMSS84W |
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Podobny opis - LMSS84W |
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