JCS2N70RH-O-R-N-B datasheet(1/5 Pages) DOINGTER

Numer części	JCS2N70RH-O-R-N-B

Szczegółowy opis	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Producent	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Strona internetowa	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=700V,ID=2A,RDS(ON)<6.3Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

700

V

VGS

Gate-Source Voltage

±

30

V

ID

Continuous Drain Current-TJ=25℃

2

A

Continuous Drain Current-TJ=100℃

1.25

EAS

Single Pulse Avalanche Energy(note1)

140

mJ

IAR

Avalanche Current(note2)

2

A

PD

Power Dissipation,

TJ=25℃

50

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

TL

Maximum lead temperature for soldering purpose,1/8”

from case for 5 seconds

300

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

2.5

℃

/W

D

S

G

1

JCS2N70RH-O-R-N-B

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