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LM2302 Arkusz danych(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Numer części LM2302
Szczegółowy opis  N-Channel Enhancement-ModeMOS FETs
PDF  3 Pages
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Producent  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Strona internetowa  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM2302 Arkusz danych(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM2302 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2302 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2302 Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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SOT-23場效應晶體管(SOT-23 Field Effect Transistors)
N
N
N
N-Channel
-Channel
-Channel
-Channel Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode MOS
MOS
MOS
MOS FETs
FETs
FETs
FETs
N
N
N
N 沟道增强型 MOS
MOS
MOS
MOS 场效应管
■
MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RA TINGS
RA TINGS
RA TINGS
RA TINGS最大額定值
Characteristic 特性參數
Symbol 符號
Max 最大值
Unit 單位
Drain-Source Voltage
漏極-源極電壓
BVDSS
20
V
Gate- Source Voltage
栅極-源極電壓
VGS
+10
V
Drain Current (continuous)
漏極電流-連續
ID
3.5
A
Drain Current (pulsed)
漏極電流-脉冲
IDM
11
A
Total Device Dissipation
總耗散功率
TA
=25℃環境溫度爲 25℃
PD
1000
mW
Junction 結溫
TJ
150
℃
Storage Temperature 儲存溫度
Tstg
-55to+150
℃
LM2302
Rev :
www.leiditech.com
01.06.2015
1/3


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