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CY7C1001 Arkusz danych(PDF) 2 Page - Cypress Semiconductor

Numer części CY7C1001
Szczegółowy opis  256K x 4 Static RAM with Separate I/O
PDF  9 Pages
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Producent  CYPRESS [Cypress Semiconductor]
Strona internetowa  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1001 Arkusz danych(HTML) 2 Page - Cypress Semiconductor

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CY7C1001
CY7C1002
PRELIMINARY
2
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature
-65
_C to +150_C
. . . . . . . . . . . . . . . . . .
Ambient Temperature with
Power Applied
-55
_C to +125_C
. . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage on VCC Relative to GND[1] -0.5V to +7.0V
.
DC Voltage Applied to Outputs
in High Z State[1]
-0.5V to VCC + 0.5V
. . . . . . . . . . . . . . . . . .
DC Input Voltage[1]
-0.5V to VCC + 0.5V
. . . . . . . . . . . . . . . .
Current into Outputs (LOW)
20 mA
. . . . . . . . . . . . . . . . . . . . .
Static Discharge Voltage
>2001V
. . . . . . . . . . . . . . . . . . . . . . . .
(per MIL STD 883, Method 3015)
LatchUp Current
>200 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Range
Range
Ambient
Temperature[2]
VCC
Commercial
0
_C to + 70_C
5V ± 10%
Military
-55
_C to + 125_C
5V ± 10%
Electrical Characteristics Over the Operating Range[3]
7C1001-12
7C1002-12
7C1001-15
7C1002-15
7C1001-20
7C1002-20
7C1001-25
7C1002-25
Parameter
Description
Test Conditions
Min. Max. Min. Max. Min. Max. Min. Max. Unit
VOH
Output HIGH
Voltage
VCC = Min.,
IOH = -4.0 mA
2.4
2.4
2.4
2.4
V
VOL
Output LOW
Voltage
VCC = Min., IOL = 8.0 mA
0.4
0.4
0.4
0.4
V
VIH
Input HIGH
Voltage
2.2
VCC
+0.3
2.2
VCC
+0.3
2.2
VCC
+0.3
2.2
VCC
+0.3
V
VIL
Input LOW
Voltage[1]
-0.3
0.8
-0.3
0.8
-0.3
0.8
-0.3
0.8
V
IIX
InputLoadCurrent GND < VI < VCC
-1
+1
-1
+1
-1
+1
-1
+1
mA
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
-5
+5
-5
+5
-5
+5
-5
+5
mA
IOS
Output Short
Circuit Current[4]
VCC = Max.,
VOUT = GND
-300
-300
-300
-300 mA
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0mA
Com'l
165
155
140
130
mA
Supply Current
IOUT = 0 mA,
f = fMAX = 1/tRC
Mil
165
150
140
ISB1
Automatic CE
PowerDown
Current
Max. VCC,
CE > VIH,
VIN >VIH or
Com'l
50
40
30
30
mA
Current
TTL Inputs
VIN > VIH or
VIN < VIL,
f = fMAX
Mil
40
30
30
ISB2
Automatic CE
PowerDown
Ct
Max. VCC,
CE > VCC - 0.3V,
VV
0 3V
Com'l
2
2
2
2
mA
Power Down
Current
CMOS Inputs
CE > VCC 0.3V,
VIN > VCC - 0.3V
or VIN < 0.3V, f=0
Mil
2
2
2
Capacitance[5]
Parameter
Description
Test Conditions
Max.
Unit
CIN: Addresses
Input Capacitance
TA = 25_C, f = 1 MHz,
VCC =5 0V
7
pF
CIN: Controls
pp
A
,,
VCC = 5.0V
10
pF
COUT
Output Capacitance
10
pF
Notes:
1. VIL (min.) = -2.0V for pulse durations of less than 20 ns.
2. TA is the instant on" case temperature.
3. See the last page of this specification for Group A subgroup testing in
formation.
4. Not more than 1 output should be shorted at one time. Duration of the
short circuit should not exceed 30 seconds.
5. Tested initially and after any design or process changes that may affect
these parameters.



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