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UTT18P06G-TN3-R Arkusz danych(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Numer części UTT18P06G-TN3-R
Szczegółowy opis  P-Channel 60 V (D-S) MOSFET
PDF  8 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UTT18P06G-TN3-R Arkusz danych(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
THERMAL RATINGS
On-Resistance vs. Junction Temperature
0.4
0.7
1.0
1.3
1.6
1.9
- 50
- 25
0
25
50
75
100
125
150
ID = 10 A
VGS = 10 V
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
40
10
1
TJ = 25 °C
TJ = 150 °C
Maximum Drain Current
vs. Case Temperature
0
5
10
15
20
25
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Safe Operating Area
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
1 s
DC
VDS - Drain-to-Source Voltage (V)
* VGS
minimum VGS at which rDS(on) is specified
100 ms
10 s
TC = 25 °C
Single Pulse
Limited by rDS(on)*
BVDSS Limited
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
0
0
6
0
1
1
10-1
10-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UTT18P06G-TN3-R
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