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FTK4903Z Arkusz danych(PDF) 2 Page - First Silicon Co., Ltd

Numer części FTK4903Z
Szczegółowy opis  40V P-Channel MOSFETs
PDF  5 Pages
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Producent  FS [First Silicon Co., Ltd]
Strona internetowa  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4903Z Arkusz danych(HTML) 2 Page - First Silicon Co., Ltd

  FTK4903Z Datasheet HTML 1Page - First Silicon Co., Ltd FTK4903Z Datasheet HTML 2Page - First Silicon Co., Ltd FTK4903Z Datasheet HTML 3Page - First Silicon Co., Ltd FTK4903Z Datasheet HTML 4Page - First Silicon Co., Ltd FTK4903Z Datasheet HTML 5Page - First Silicon Co., Ltd  
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Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-40
---
---
V
IDSS
Drain-Source Leakage Current
VDS=
-40V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-32V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-15A
---
11.3
14
mΩ
VGS=
-4.5V , ID=-8A
---
15.6
21
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =
-250uA
-1.0
-1.6
-2.5
V
gfs
Forward Transconductance
VDS=
-10V , ID=-4A
---
11
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3, 4
VDS=
-32V , VGS=-4.5V , ID=-10A
---
22.2
40
nC
Qgs
Gate-Source Charge3, 4
---
8.2
16
Qgd
Gate-Drain Charge3, 4
---
8.8
16
Td(on)
Turn-On Delay Time3, 4
VDD=
-20V , VGS=-10V , RG=6Ω
ID=
-1A
---
23
40
ns
Tr
Rise Time3, 4
---
10
20
Td(off)
Turn-Off Delay Time3, 4
---
135
250
Tf
Fall Time3, 4
---
46
90
Ciss
Input Capacitance
VDS=
-25V , VGS=0V , F=1MHz
---
2757
4000
pF
Coss
Output Capacitance
---
240
360
Crss
Reverse Transfer Capacitance
---
137
200
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-38
A
ISM
Pulsed Source Current
---
---
-76
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=51A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
40V P-Channel MOSFETs
Electrical Characteristics (TJ=25℃, unless otherwise noted)
FTK4903Z
2020. 01. 14
2/5
Revision No : 0



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