WNMD2158-8-TR datasheet(3/8 Pages) VBSEMI

Numer części	WNMD2158-8-TR

Szczegółowy opis	Dual N-Channel MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Producent	VBSEMI [VBsemi Electronics Co.,Ltd]

Strona internetowa	www.VBsemi.com

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3 / 8 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

On-Resistance vs. Junction Temperature

1234

VGS = 5 thru 3 V

2 V

2.5 V

VDS - Drain-to-Source Voltage (V)

0.01

0.02

0.03

0.04

0.05

0.06

VGS = 4.5 V

VGS = 2.5 V

ID - Drain Current (A)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

VGS = 4.5 V

ID = 6.5 A

TJ - Junction Temperature (°C)

Transfer Characteristics

Gate Charge

Source-Drain Diode Forward Voltage

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

25 °C

VDS = 10 V

ID = 6.5 A

Qg - Total Gate Charge (nC)

1.2

1.5

0.1

0.3

0.6

0.9

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

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WNMD2158-8/TR

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