HM85P03K datasheet(2/4 Pages) HMSEMI

Numer części	HM85P03K

Szczegółowy opis	P-Channel Enhancement Mode MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Producent	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

Strona internetowa	http://www.hmsemi.com/

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HM85P03K

-30VDS／±25VGS／85A(ID) P-Channel Enhancement Mode MOSFET

Electrical Characteristics of CP Test (TA=25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage VGS=0V,ID=-250uA

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V,VGS=0V

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=-250uA

0.45

0.65

1.5

IGSS

Gate Leakage Current

VGS=±25V, VDS=0V

±100

RDS(on)

Drain-Source On-Resistance

VGS=-20V, ID=20A

mΩ

VGS=-10V, ID=15A

7.6

VGS=-4.5V, ID=10A

VSD

Diode Forward Voltage

ISD=15A,VGS=0V

0.75

1.1

Gate Resistance

VGS=0V, VDS=0V,

Frequency=1MHz

Ω

Note: 1: Pulse test ; pulse width ≦ 300ns, duty cycle ≦ 2%.

2: Guaranteed by design, not subject to production testing.

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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