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FTK7N60PD Arkusz danych(PDF) 3 Page - First Silicon Co., Ltd |
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FTK7N60PD Arkusz danych(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 6 page ![]() 2010. 05. 18 3/6 FTK7N60P / F / DD Revision No : 1 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) VSD VGS = 0 V, IS = 7.0 A 1.5 V IS 7.0 A ISM 28 A tRR 400 ns QRR VGS = 0 V, IS = 7.0A, dIF/dt =100 A/µs (Note 4) 4.0 µC Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 19.5mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge MAX |
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