B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM

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Vishay General Semiconductor

Revision: 03-Sep-2020

3

Document Number: 88533

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Derating Curves Output Rectified Current for

B40C800D...B125C800DM

Fig. 2 - Derating Curves Output Rectified Current for

B250C800D...B360C800DM

Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 4 - Typical Forward Characteristics Per Diode

Fig. 5 - Typical Reverse Leakage Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

20

40

60

0.2

0.4

0.6

0.8

1.0

80

100

120

140

0

0

0 - 10 µF

10 - 100 µF

> 100 µF

Capacitive Load

Mounted on P.C.B. with 0.06

"

(1.5 mm) Lead Length

Copper Pads

0.51 x 0.51

" (13 x 13 mm)

50 to 60 Hz

Resistive or Inductive Load

Ambient Temperature (°C)

60

80

100

140

0

0.2

0.6

0.8

1.0

0.4

0

20

40

120

Capacitive Load

Mounted on P.C.B. with 0.06

"

(1.5 mm) Lead Length

Copper Pads

0.51 x 0.51

" (13 x 13 mm)

50 to 60 Hz

Resistive or Inductive Load

0 - 10 µF

10 - 100 µF

> 100 µF

Ambient Temperature (°C)

0

10

100

0

10

20

30

40

50

Number of Cycles at 50 Hz

T

10 ms Single Sine-Wave

1.0 Cycle

0.4

0.8

1.2

10

1

0.1

0.01

0.6

1.0

1.4

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

0

20

40

60

80

100

0.01

0.1

1

10

Percent of Rated Peak Reverse Voltage (%)

T

T

1

10

100

1

10

100

T

f = 1.0 MHz

V

Reverse Voltage (V)