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UT4450G-S08-R Arkusz danych(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numer części UT4450G-S08-R
Szczegółowy opis  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Producent  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Strona internetowa  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT4450G-S08-R Arkusz danych(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
---
---
V
△BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃ ,
ID=1mA
---
0.04
---
V/℃
IDSS
Dra i n-Source Leakage Current
VDS=40V , VGS=0V ,
TJ=25℃
---
---
1
uA
VDS=32V , VGS=0V ,
TJ=125℃
---
---
10
uA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1
1.8
2.5
V
△VGS(th)
VGS(th) Temperature Coefficient
---
-3
---
mV/℃
RDS(ON)
Sta ti c Drain-Source On Resistance
VGS=10V,ID=5A
---
24
32
mΩ
VGS=4.5V,ID=3A
---
32
45
GFS
Forwa rd Tra nsconductance
VDS=10V, ID=10A
---
18
---
S
Dynamic Characteristics
4
Ciss
Input Ca pacitance
VDS=15V, VGS=0V, f=1MHz
---
420
800
pF
Coss
Output Ca pacitance
---
65
120
Crss
Reverse Tra nsfer Ca pacitance
---
40
80
Switching Characteristics
td(on)
Turn-On Delay Ti me
2,3
VDD=20V, ID=1A,
RGEN=25Ω, VGS=4.5V
---
3.2
6
ns
tr
Ri s e Time
2,3
---
8.6
16
ns
td(off)
Turn-Off Delay Ti me
2,3
---
18
36
ns
tf
Fa ll Ti me
2,3
---
6
12
ns
UT4450G-S08-R



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